Es because it gives the positive aspects of non-toxicity, cost-effectiveness, and abundance. To meet the demand for high-performance p-channel devices, Bae et al. enhanced the overall performance of copper-based TFTs by doping the semiconductor film with gallium atoms to cut down oxygen vacancies, which are identified to interfere using the conduction of hole carriers [14]. Moreover, Baig et al. demonstrated that the doping of CuO with yttrium atoms could improve the device performance [15]. The doping procedure for p-type oxide semiconductors, as demonstrated in prior studies, is vital to modulate the charge carrier density of your semiconductor film and enhance the electrical overall performance of CuO-based TFTs. Nevertheless, analysis on doping technology for p-type oxide semiconductors continues to be in its infancy and doping these supplies as a post-processing technologies has hardly been studied. In the present paper, we report the effects of iodine doping on the structural and electrical traits of solution-processed CuO semiconductor films plus the TFT efficiency. Note that answer processing is a simple and cost-effective method for fabricating oxide semiconductors. Here, the p-type CuO semiconductor films have been formed via spin-coating and the CuO film was doped with iodine vapor. Experimental outcomes demonstrated that iodine doping can be a novel post-processing method to improve the electrical properties of CuO semiconductors and the performance of CuO TFTs. 2. Supplies and Methods To fabricate CuO TFTs with an inverted staggered Etiocholanolone Technical Information structure shown in Figure 1a, a p-doped silicon substrate having a 100-nm-thick silicon nitride (SiNx) dielectric layer was sequentially cleaned by sonication in acetone, isopropyl alcohol, and deionized water. Oxygen plasma therapy was performed to make the substrate surface hydrophilic, which was a necessary method to improve the coatability of the CuO precursor answer around the substrate. For the oxygen plasma treatment, a radio frequency power of 45 W was applied for two min, though the oxygen flow rate was maintained at 20 sccm. The CuO-precursor resolution was ready by dissolving 0.3 M of copper(II) acetate hydrate [Cu(CO2 CH3)two H2 O] in 2-methoxyethanol, which was then stirred making use of a magnetic bar at a rotation speed of about 750 rpm on a hotplate (Conring, Seoul, Korea) heated to 75 C for 1 h. The precursor answer was filtered via a poly-tetrafluoroethylene syringe filter (Hyundai Micro, Seoul, Korea) with pore size of 0.2 and spin-coated on the oxygen-plasma-treated substrate at 2000 rpm for 1 min. The coated film was dried on a hotplate at 80 C for 5 min and 120 C for 20 min to evaporate the solvent and after that thermally annealed inside a vacuum tube furnace (Daeki, Daejeon, Korea) at 500 C for 30 min. Ultimately, 30-nm-thick Au source and drain electrodes with an interdigitated geometry have been thermally deposited around the CuO semiconductor layer by means of a shadow mask beneath a base pressure of roughly six 10-6 Torr. The interdigitated electrodes consisted of five pairs using a 80- channel length as well as a 400- electrode width. As a result, the powerful channel length and width in our transistors have been 80 and 2000 , respectively. To dope the CuO films with iodine, the fabricated CuO TFTs had been exposed to iodine vapor for five s as shown in Figure 1b; iodine vapor was developed by sublimation from solid iodine at area temperature, as well as the vapor pressure of iodine at space Troglitazone web temperature is recognized to become approximately 0.4 mbar.Materials.